Hf-based High-k Dielectrics Process Development Performance Characterization - Young-Hee Kim - Paperback - en Book

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Hf-based High-k Dielectrics Process Development Performance Characterization - Young-Hee Kim - Paperback - en Book

Hf-based High-k Dielectrics Process Development Performance Characterization - Young-Hee Kim - Paperback - en Book

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Hf-based High-k Dielectrics Process Development Performance Characterization - Young-Hee Kim - Paperback - en Book

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Description

Hf-based High-k Dielectrics Process Development Performance Characterization - Young-Hee Kim - Paperback - en Book

In This Work, The Reliability Of Hfo2 (hafnium Oxide) With Poly Gate And Dual Metal Gate Electrode (ru-ta Alloy, Ru) Was Investigated. Hard Breakdown And Soft Breakdown, Particularly The Weibull Slopes, Were Studied Under Constant Voltage Stress. Dynamic Stressing Has Also Been Used.
  • Brand: Unbranded
  • Category: Computing & Internet
  • Format: Paperback
  • Language: en
  • Length: 104
  • Publisher / Label: Springer Nature B.V
  • Author: Young-Hee Kim
  • Fruugo ID: 491288589-1014622446
  • ISBN: 9783031014246

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