1. Introduction. - 1. 1 Advent of Power Cryoelectronics. - 1. 2 Cryogenic Power Applications. - 1. 3 Advantages of using semiconductor devices at low temperatures. - 1. 4 Inferences and Objectives. - 2. Temperature Dependence of Silicon Properties. - 2. 1 Semiconductor statistics and carrier Freezeout. - 2. 2 Energy bandgap of Silicon. - 2. 3 Intrinsic Carrier Concentration. - 2. 4 Carrier Mobility. - 2. 5 Carrier Lifetime. - 2. 6 Breakdown Phenomenon. - 3. Schottky Barrier Diodes. - 3. 1 Device Operation. - 3. 2 Experimental Results. - 3. 3 Optimization of Schottky Barrier Diodes for low temperature operation. - 3. 4 Conclusions. - 4. P-I-N Diode. - 4. 1 Basic Structure. - 4. 2 Experimental Results. - 4. 3 Analytical Modeling. - 4. 4 Conclusions. - 5. Power Bipolar Transistors. - 5. 1 Basic Operation. - 5. 2 Experimental Results. - 5. 3 Emitter Current Crowding. - 5. 4 Transistor Optimization. - 5. 5 Conclusions. - 6. Power Mosfets. - 6. 1 Device Operation. - 6. 2 Carrier freezeout in silicon. - 6. 3 Experimental Results. - 6. 4 Discussion. - 6. 5 Conclusion. - 7. Insulated Gate Bipolar Transistors. - 7. 1 Device operation. - 7. 2 Experimental results. - 7. 3 Conclusion. - 8. Power Junction Field Effect Transistors. - 8. 1 Basic Operation. - 8. 2 Forward Blocking. - 8. 3 Forward Conduction. - 8. 4 Conclusions. - 9. Asymmetric Field Controlled Thyristors. - 9. 1 Basic Operation. - 9. 2 Static Characteristics. - 9. 3 Switching Characteristics. - 9. 4 Trade-Off curve and Conclusions. - 10. Thyristors. - 10. 1 Basic Operation. - 10. 2 Static Characteristics. - 10. 3 Switching Characteristics. - 10. 4 Conclusions. - 11. Synopsis. - 11. 1 Design considerations for power devices at 77K. - 11. 2 Performance of power devices at 77K. - 11. 3 Power devices for cryogenic applications. - References. Language: English